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Service Hotline 400-602-0999
Our Services Failure Analysis Power Device Parameter Test
Power Device Parameter Test
GRG Test actively operates the testing business of the third generation semiconductor power devices. We have introduced internationally advanced testing technology, so as to provide device parameter testing services for upstream and downstream enterprises in the power semiconductor industry, and promote the localization and high-tech development of devices. The test items include: static parameters, dynamic parameters, thermal characteristics, avalanche tolerance, short circuit characteristics and insulation withstand voltage test; and the equipment supports parameter tests of devices of 0-1500A and 0-3000V, covering MIL-STD-750, IEC 60747 series, GB/T29332 and other standards.
Service Introduction
As technology advances, the third generation semiconductor power devices have now gone into a stage of commercial application from the laboratory stage, enjoying great potential for future applications. The test of these new devices requires higher voltage and power levels and faster switching time.
 

Test Cycle:

Determined in accordance with standards, test conditions and quantity of measured samples
 

Product Scope:

Discrete devices such as MOSFET, IGBT, DIODE, BJT and third generation semiconductor devices, and the power modules composed of the above elements
 

Test Items:

Static Parameter Symbol
Drain to Source Breakdown Voltage BVDSS
Drain Leakage Current IDSS
Gate Leakage Current IGSS
Gate Threshold Voltage VGS(th)
Drain to Source On Resistance RDS(on)
Drain to Source On Voltage VDS(on)
Body Diode Forward Voltage VSD
Internal Gate Resistance Rg
Input capacitance Cies
Output capacitance Coes
Reverse transfer capacitance Cres
Transconductance gfs
Gate to Source Plateau Voltage Vgs(pl)
 
Dynamic Parameter Symbol
Turn-on delay time td(on)
Rise time tr
Turn-off delay time td(off)
Fall time tf
Turn-on energy Eon
Turn-off energy Eoff
Diode reverse recovery time trr
Diode reverse recovery charge Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse dirr/dt
recovery current
Total gate charge QG
Gate-Emitter charge QGC
Gate-Collector charge QGE
 
Other Parameters Symbol
thermal resistance Rth
Unclamped Inductive Switching UIS
Reverse biased safe operating area RBSOA
Short circuit safe operation area SCSOA