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Our Services Failure Analysis AEC-Q101 Certification Test for Semiconductor Discrete Devices
AEC-Q101 Certification Test for Semiconductor Discrete Devices
AEC-Q101 has sorted out the vehicle reliability requirements for various semiconductor discrete devices. AEC-Q101 test serves as not only a report that can be used worldwide on the reliability of components, but also a stepping stone to the on-board supply chain. With rich practical experience in AEC-Q certification of SiC third generation semiconductor devices, GRG Test is competent to provide professional and reliable AEC-Q101 certification services; besides, we have also carried out IOL, HAST, H3TRB, HTRB, HTGB and Autoclave test services, and the equipment is totally capable of conducting tests of the reliability of SiC third generation semiconductor devices.
Service Introduction
As technology has advanced at a breathless pace, all kinds of semiconductor power devices have now gone into a stage of commercial application from the laboratory stage. This is especially true for the third generation semiconductor devices represented by SiC-- they have accelerated the process of localization. However, the market for automotive discrete devices has been controlled by foreign giants, leaving it difficult for domestic devices to get a slice of the action. And one of the main reasons for such phenomenon is that reliability of our products is not well recognized. 
 

Test Cycle: 

2-3 months, during which comprehensive certification plan, testing and other services will be provided 
 

Product Scope: 

Semiconductor discrete devices such as diode, triode, transistor, MOS, IBGT, TVS tube, Zener and thyratron 
 

Test Items: 

S/N

Test Item

Abbreviation

Sample Number/Batch

Batch Number

Test Method

1 Pre- and Post-Stress Electrical and Photometric Test TEST

Test before and after all stress tests

User specifications or supplier's standard specifications

2 Pre-conditioning PC

Pre-treat SMD products before tests 7, 8, 9 and 10

JESD22-A113
3 External Visual EV
Test before and after each test
JESD22-B101
4 Parametric Verification PV 25 3 Note A

User specifications

5 High Temperature
Reverse Bias
HTRB 77 3 Note B MIL-STD-750-1
M1038 Method A
5a AC blocking
voltage
ACBV 77 3 Note B MIL-STD-750-1
M1040 Test Condition A
5b High Temperature
Forward Bias
HTFB 77 3 Note B JESD22
A-108
5c Steady State
Operational
SSOP 77 3 Note B MIL-STD-750-1
M1038 Condition B(Zeners)
6 High Temperature
Gate Bias
HTGB 77 3 Note B JESD22
A-108
7 Temperature
Cycling
TC 77 3 Note B JESD22
A-104
Appendix 6
7a Temperature
Cycling Hot Test
TCHT 77 3 Note B JESD22
A-104
Appendix 6
7a
alt
TC Delamination
Test
TCDT 77 3 Note B JESD22
A-104
Appendix 6
J-STD-035
7b Wire Bond Integrity WBI 5 3 Note B MIL-STD-750
Method 2037
8 Unbiased Highly
Accelerated Stress
Test
UHAST 77 3 Note B JESD22
A-118
8
alt
Autoclave AC 77 3 Note B JESD22
A-102
9 Highly Accelerated
Stress Test
HAST 77 3 Note B JESD22
A-110
9
alt
High Humidity
High Temp.
Reverse Bias
H3TRB 77 3 Note B JESD22
A-101
10 Intermittent
Operational Life
IOL 77 3 Note B MIL-STD-750
Method 1037
10
alt
Power and
Temperature Cycle
PTC 77 3 Note B JESD22
A-105
11 ESD
Characterization
ESD 30 HBM 1 AEC-Q101-001
30 CDM 1 AEC-Q101-005
12 Destructive
Physical Analysis
DPA 2 1 NoteB AEC-Q101-004
Section 4
13 Physical
Dimension
PD 30 1 JESD22
B-100
14 Terminal Strength TS 30 1 MIL-STD-750
Method 2036
15 Resistance to
Solvents
RTS 30 1 JESD22
B-107
16 Constant Acceleration CA 30 1 MIL-STD-750
Method 2006
17 Vibration Variable
Frequency
VVF

Items 16 to 19 are sequential tests of sealed packages. (See Note H on the Legend page.)

JEDEC
JESD22-B103
18 Mechanical
Shock
MS     JEDEC
JESD22-B104
19 Hermeticity HER     JESD22-A109
20 Resistance to
Solder Heat
RSH 30 1 JESD22
A-111 (SMD)
B-106 (PTH)
21 Solderability SD 10 1 Note B J-STD-002
JESD22B102
22 Thermal
Resistance
TR 10 1 JESD24-3,24-4,26-6 Depend on the situation
23 Wire Bond
Strength
WBS

10 solder wires for a minimum of 5 devices

1 MIL-STD-750
Method 2037
24 Bond Shear BS 10 solder wires for a minimum of 5 devices 1 AEC-Q101-003
25 Die Shear DS 5 1 MIL-STD-750
Method 2017
26 Unclamped
Inductive
Switching
UIS 5 1 AEC-Q101-004
Section 2
27 Dielectric Integrity DI 5 1 AEC-Q101-004
Section 3
28 Short Circuit
Reliability
Characterization
SCR 10 3 Note B AEC-Q101-006
29 Lead Free LF     AEC-Q005

 

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