AEC-Q101 Certification Test for Semiconductor Discrete Devices

Our Services Failure Analysis AEC-Q101 Certification Test for Semiconductor Discrete Devices

AEC-Q101 Certification Test for Semiconductor Discrete Devices

AEC-Q101 has sorted out the vehicle reliability requirements for various semiconductor discrete devices. AEC-Q101 test serves as not only a report that can be used worldwide on the reliability of components, but also a stepping stone to the on-board supply chain. With rich practical experience in AEC-Q certification of SiC third generation semiconductor devices, GRG Test is competent to provide professional and reliable AEC-Q101 certification services; besides, we have also carried out IOL, HAST, H3TRB, HTRB, HTGB and Autoclave test services, and the equipment is totally capable of conducting tests of the reliability of SiC third generation semiconductor devices.

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EMC Simulation

Service Introduction

As technology has advanced at a breathless pace, all kinds of semiconductor power devices have now gone into a stage of commercial application from the laboratory stage. This is especially true for the third generation semiconductor devices represented by SiC-- they have accelerated the process of localization. However, the market for automotive discrete devices has been controlled by foreign giants, leaving it difficult for domestic devices to get a slice of the action. And one of the main reasons for such phenomenon is that reliability of our products is not well recognized.

Test Cycle:

2-3 months, during which comprehensive certification plan, testing and other services will be provided

Product Scope:

Semiconductor discrete devices such as diode, triode, transistor, MOS, IBGT, TVS tube, Zener and thyratron

Test Items:

S/N	Test Item	Abbreviation	Sample Number/Batch	Batch Number	Test Method

1	Pre- and Post-Stress Electrical and Photometric Test	TEST	Test before and after all stress tests		User specifications or supplier's standard specifications
2	Pre-conditioning	PC	Pre-treat SMD products before tests 7, 8, 9 and 10		JESD22-A113
3	External Visual	EV	Test before and after each test		JESD22-B101
4	Parametric Verification	PV	25	3 Note A	User specifications
5	High Temperature Reverse Bias	HTRB	77	3 Note B	MIL-STD-750-1 M1038 Method A

5a	AC blocking voltage	ACBV	77	3 Note B	MIL-STD-750-1 M1040 Test Condition A

5b	High Temperature Forward Bias	HTFB	77	3 Note B	JESD22 A-108

5c	Steady State Operational	SSOP	77	3 Note B	MIL-STD-750-1 M1038 Condition B（Zeners）

6	High Temperature Gate Bias	HTGB	77	3 Note B	JESD22 A-108

7	Temperature Cycling	TC	77	3 Note B	JESD22 A-104 Appendix 6


7a	Temperature Cycling Hot Test	TCHT	77	3 Note B	JESD22 A-104 Appendix 6


7a alt	TC Delamination Test	TCDT	77	3 Note B	JESD22 A-104 Appendix 6 J-STD-035



7b	Wire Bond Integrity	WBI	5	3 Note B	MIL-STD-750 Method 2037

8	Unbiased Highly Accelerated Stress Test	UHAST	77	3 Note B	JESD22 A-118


8 alt	Autoclave	AC	77	3 Note B	JESD22 A-102

9	Highly Accelerated Stress Test	HAST	77	3 Note B	JESD22 A-110

9 alt	High Humidity High Temp. Reverse Bias	H3TRB	77	3 Note B	JESD22 A-101


10	Intermittent Operational Life	IOL	77	3 Note B	MIL-STD-750 Method 1037

10 alt	Power and Temperature Cycle	PTC	77	3 Note B	JESD22 A-105

11	ESD Characterization	ESD	30 HBM	1	AEC-Q101-001
			30 CDM	1	AEC-Q101-005
12	Destructive Physical Analysis	DPA	2	1 NoteB	AEC-Q101-004 Section 4

13	Physical Dimension	PD	30	1	JESD22 B-100

14	Terminal Strength	TS	30	1	MIL-STD-750 Method 2036

15	Resistance to Solvents	RTS	30	1	JESD22 B-107

16	Constant Acceleration	CA	30	1	MIL-STD-750 Method 2006

17	Vibration Variable Frequency	VVF	Items 16 to 19 are sequential tests of sealed packages. (See Note H on the Legend page.)		JEDEC JESD22-B103

18	Mechanical Shock	MS			JEDEC JESD22-B104

19	Hermeticity	HER			JESD22-A109

20	Resistance to Solder Heat	RSH	30	1	JESD22 A-111 (SMD) B-106 (PTH)


21	Solderability	SD	10	1 Note B	J-STD-002 JESD22B102

22	Thermal Resistance	TR	10	1	JESD24-3,24-4,26-6 Depend on the situation

23	Wire Bond Strength	WBS	10 solder wires for a minimum of 5 devices	1	MIL-STD-750 Method 2037

24	Bond Shear	BS	10 solder wires for a minimum of 5 devices	1	AEC-Q101-003
25	Die Shear	DS	5	1	MIL-STD-750
					Method 2017
26	Unclamped Inductive Switching	UIS	5	1	AEC-Q101-004 Section 2


27	Dielectric Integrity	DI	5	1	AEC-Q101-004 Section 3

28	Short Circuit Reliability Characterization	SCR	10	3 Note B	AEC-Q101-006


29	Lead Free	LF			AEC-Q005

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